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SIHL620STRL-GE3

Part No SIHL620STRL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description LOGIC MOSFET N-CHANNEL 200V / N-Channel 200 V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHL620STRL-GE3TR,742-SIHL620STRL-GE3DKR,742-SIHL620STRL-GE3CT
Standard Package 800
Win Source Part Number 1028563-SIHL620STRL-GE3
Ultra Librarian 3D Model Ultra Librarian SIHL620STRL-GE3 CAD Model

Description

The Vishay Siliconix SIHL620STRL-GE3 is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 200V and continuous drain current (Id) of 5.2A at 25°C (Tc).

  • Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25V
  • Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5978 $59.7800
240+ $0.4906 $117.7440
365+ $0.4752 $173.4480
505+ $0.4598 $232.1990
650+ $0.4446 $288.9900
870+ $0.3985 $346.6950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,460 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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