The Vishay SIA110DJ-T1-GE3 is a TrenchFET Gen IV MOSFET transistor that comes in a tape and reel package.

• Standard Package: 3,000 pieces
• Mounting: SMD (SMT)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100V
• Continuous Drain Current (Id) @ 25°C: 5.4A (Ta) or 12A (Tc)
• Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250μA
• Power Dissipation (max): 3.5W (Ta) or 19W (Tc)
• Package: PowerPAK SC-70-6
• Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
• Vgs (Max): ±20V
• Operating Temperature Range: -55°C ~ 150°C (TJ)
• Alternative Parts: None
• ECCN: EAR99
• HTSUS: 8541.29.0095