IRFZ10 Real Image
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 300pF at 25V
Power Dissipation (Maximum) 43W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188158-IRFZ10
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ10 CAD Model

Description

The IRFZ10 is a high-quality N-channel MOSFET suitable for various applications from Vishay Siliconix.

  • Designed to: operate in a temperature range of up to 175°C
  • Package: TO-220AB package for through-hole mounting
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 10A
  • Maximum On-Resistance: 200mOhm @ 6A and 10V gate-source voltage
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 300pF @ 25V
  • Status: an obsolete electronic component with a medium popularity and a balanced supply and demand status
  • Ideal for: use in circuits that require a high-quality, reliable N-channel MOSFET

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2264 $65.6560
695+ $0.1863 $129.4785
1,080+ $0.1798 $194.1840
1,485+ $0.1746 $259.2810
1,925+ $0.1682 $323.7850
2,565+ $0.1513 $388.0845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 5,040 pieces
MOQ: 290 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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