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Same model may have multiple batches, images only for reference.
IRFR9020TRL Real Image
Same model may have multiple batches, images only for reference.

IRFR9020TRL

Part No IRFR9020TRL
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET P-CH 50V 9.9A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 50V
Id - Continuous Drain Current 9.9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 280mOhm at 5.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 490pF at 25V
Power Dissipation (Maximum) 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187957-IRFR9020TRL
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9020TRL CAD Model

Description

The Vishay Siliconix MOSFET is a P-channel transistor with a drain-source breakdown voltage of 50V and a continuous drain current of 9.9A.

  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 9.9A
  • Maximum Rds On: 280mOhm @ 5.7A and 10V drive voltage
  • Gate Charge (Qg) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 490pF @ 25V
  • Power Dissipation: 42W
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Application: Discrete semiconductor products
  • Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
30+ $1.9500 $58.5000
65+ $1.6000 $104.0000
100+ $1.5500 $155.0000
135+ $1.5000 $202.5000
175+ $1.4500 $253.7500
235+ $1.3000 $305.5000
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