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Same model may have multiple batches, images only for reference.
AO4494L Real Image
Same model may have multiple batches, images only for reference.

AO4494L

Part No AO4494L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog FETs - Single
Description N-Channel Enhancement Mode Field Effect Transistor | MOSFET N-CH 30V 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6.5mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 15V
Power Dissipation (Maximum) 3.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SOIC
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1144782-AO4494L
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AO4494L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AO4494L is an N-Channel MOSFET transistor with a maximum drain-source breakdown voltage of 30V and a continuous drain current of 18A.

  • Drain-Source Breakdown Voltage (Max): 30V
  • Continuous Drain Current: 18A
  • Gate-Source Voltage (Max): ±20V
  • Gate-Source Voltage(th): 2.5V @ 250μA
  • Input Capacitance (Max): 1900pF @ 15V
  • Gate Charge (Qg) (Max): 36nC @ 10V
  • Supply and Demand: Balanced
  • Package Quantity: 3,000 Units
  • Power Dissipation (Max): 3
  • Status: Obsolete

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