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Same model may have multiple batches, images only for reference.
IRFU014 Real Image
Same model may have multiple batches, images only for reference.

IRFU014

Part No IRFU014
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) | MOSFET N-CH 60V 7.7A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 7.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 4.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 300pF at 25V
Power Dissipation (Maximum) 2.5W, 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-251AA
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188058-IRFU014
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU014 CAD Model

Description

The Vishay Siliconix MOSFET is a N-Channel transistor with a maximum drain-source breakdown voltage of 60V and a continuous drain current of 7.7A.

  • Maximum drain-source breakdown voltage: 60V
  • Continuous drain current: 7.7A
  • Maximum gate-source voltage: ±20V
  • Input capacitance: 300pF @ 25V
  • Drive Voltage: 10V
  • Power Dissipation: 2.5W, 25W
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Status: Obsolete
  • Supply and Demand Status: balanced
  • Manufacturer's Homepage: www.irf.com

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