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Same model may have multiple batches, images only for reference.
IRFBC20LPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBC20LPBF

Part No IRFBC20LPBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 600V 2.2A TO-262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 2.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.4Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 25V
Power Dissipation (Maximum) 3.1W, 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-262-3
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187523-IRFBC20LPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC20LPBF CAD Model

Description

The IRFBC20LPBF is an N-channel MOSFET from Vishay Siliconix. It is designed for use in discrete semiconductor products and comes in a TO-262-3 package.

  • Channel Type: N-channel
  • Package: TO-262-3
  • Vds - Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 2.2A
  • Rds On (Maximum) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Input Capacitance (Ciss) (Maximum) @ Vds: 350pF @ 25V

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