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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 180mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 3.1W, 130W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187117-IRF640S
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF640S CAD Model

Description

The Vishay Siliconix MOSFET is a N-Channel transistor with a drain-source breakdown voltage of 200V and continuous drain current of 18A.

  • Manufacturer: Vishay Siliconix
  • Product: MOSFET
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 18A
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Maximum Input Capacitance: 1300pF @ 25V
  • Gate Charge: 70nC @ 10V
  • Package: D2PAK with 2 leads and a tab
  • Power Dissipation: 3.1W
  • Maximum Rds On: 180mOhm @ 11A and 10V
  • Status: Obsolete
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.2500 $65.0000
8+ $13.3334 $106.6672
12+ $12.9167 $155.0004
16+ $12.5000 $200.0000
21+ $12.0834 $253.7514
28+ $10.8334 $303.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 30,000 pieces
MOQ: 4 pcs
Order Increment : 1 piece
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