The UTM3023L-TN3-R is an N-Channel enhancement mode power MOSFET from Unisonic Technologies Co., Ltd (UTC). This MOSFET is designed for low voltage applications where high efficiency and fast switching are required.

Applications:

• Load Switching
• DC-DC Conversion
• Power Management in Portable Devices
• Battery Management Systems

Features:

• Low RDS(on) – Reduces conduction losses.
• Low Gate Charge – Enables fast switching speeds.
• 100% UIS Tested – Ensures avalanche ruggedness.
• Halogen-Free

Benefits:

• Improved Efficiency in Power Conversion: Low RDS(on) minimizes power dissipation, leading to higher efficiency.
• Faster Switching Speeds: Lower gate charge allows for quicker transitions, suitable for high-frequency applications.
• Robust Performance: UIS testing guarantees that the MOSFET can withstand high energy pulses.
• Environmentally Friendly: Halogen-free construction meets environmental regulations.

Additional Details:

The UTM3023L-TN3-R has a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 5.5A. The on-resistance (RDS(on)) is typically 22mΩ at VGS = 10V. The gate threshold voltage is between 1V and 3V. The device is packaged in a SOT-23 package for surface mount assembly.

This MOSFET is optimized for battery-powered and portable applications. The low on-resistance minimizes conduction losses and improves the overall efficiency. Its fast switching capability and avalanche rating further enhance its usability in demanding applications.