The TJ20S04M3L is a 40V N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for use in switching applications, such as DC-DC converters, load switches, and motor control circuits. The MOSFET features low on-resistance and high-speed switching characteristics, enabling efficient and reliable operation.

Applications

• DC-DC converters
• Load switches
• Motor control circuits
• Power management systems
• Battery management systems

Features

• Low on-resistance (RDS(ON))
• High-speed switching
• Low gate charge (Qg)
• Avalanche ruggedness
• Lead-free package

Benefits

• Reduces power losses and improves efficiency in switching applications.
• Enables fast and precise control of switching circuits.
• Minimizes switching losses and improves overall system performance.
• Provides robust protection against voltage spikes.
• Complies with environmental regulations.

Technical Specifications

Drain-Source Voltage (VDSS): 40V
Gate-Source Voltage (VGSS): ±20V
Drain Current (ID): 20A
On-Resistance (RDS(ON)): 13.5 mΩ (at VGS = 10V)
Gate Charge (Qg): 14 nC (Typical)
Operating Temperature Range: -55°C to +150°C
Package: SOP-Advance(N)