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Same model may have multiple batches, images only for reference.
SI4913DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4913DY-T1-GE3

Part No SI4913DY-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 7.1A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 7.1A
Rds On (Maximum) at Id, Vgs 15mOhm at 9.4A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 500μA
Gate Charge (Qg) (Maximum) at Vgs 65nC at 4.5V
Maximum Power 1.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number SI4913
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 712138-SI4913DY-T1-GE3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4913DY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4913DY-T1-GE3 is a dual P-channel logic level gate FET with a maximum power of 1.1W.

  • Operating Temperature Range: -55°C to 150°C
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7.1A
  • Maximum Rds On: 15mOhm @ 9.4A and 4.5V
  • Gate Source Voltage (th): 1V @ 500μA
  • Gate Charge (Qg): 65nC @ 4.5V
  • Package: 8-SOIC
  • Popularity: Low
  • Supply and Demand Status: Limited
  • Product Status: Obsolete
  • ECCN: EAR99

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