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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 15A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 220mOhm at 7.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 1240pF at 100V
Power Dissipation (Maximum) 110W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262348-STW18N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW18N65M5 CAD Model

Description

STW18N65M5 - N-channel 650 V, 0.150 Ohm typ., 13 A MDmesh™ M5 Power MOSFET in a TO-247 package by STMicroelectronics

The STW18N65M5 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed with the innovative MDmesh™ M5 technology. This Power MOSFET is tailored for high-efficiency applications, thanks to its outstanding on-resistance and switching performance. Encased in a robust TO-247 package, the STW18N65M5 is engineered to handle a high continuous current of 13 A, making it an excellent choice for a wide range of power conversion applications.

With a breakdown voltage of 650 V, the STW18N65M5 ensures safe operation even under high voltage conditions, providing a reliable solution for power supply designers. The device's low on-resistance of just 0.150 Ohm typ. contributes to reduced conduction losses, improving overall system efficiency. This feature, combined with the MOSFET's fast-switching capabilities, allows for high-performance power conversion in applications such as switched-mode power supplies, LED lighting, welding equipment, and solar inverters.

The MDmesh™ M5 technology integrates a vertical structure that optimizes the RDS(on) area figure of merit, providing an excellent trade-off between on-resistance and gate charge. This results in lower switching and conduction losses, which is critical for energy-saving in power applications. The STW18N65M5 also includes a fast body diode, which enhances performance during hard switching events and reduces recovery times, further improving the efficiency of the applications it's used in.

Additional features of the STW18N65M5 include a 100% avalanche tested ruggedness, which ensures reliability and longevity, and a high dv/dt capability, which provides robustness against harsh operating conditions. The device is also designed to meet the stringent industrial standards, offering a high level of performance and reliability that designers have come to expect from STMicroelectronics.

In summary, the STW18N65M5 from STMicroelectronics is a high-voltage, high-efficiency Power MOSFET that is ideal for modern high-performance power conversion systems. Its advanced technology, low on-resistance, and fast switching characteristics make it a top choice for engineers looking to optimize their power designs for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1544 $58.1616
33+ $3.4088 $112.4904
51+ $3.3023 $168.4173
71+ $3.1958 $226.9018
91+ $3.0892 $281.1172
122+ $2.7696 $337.8912
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 6,900 pieces
MOQ: 14 pcs
Order Increment : 1 piece
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