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Manufacturer STMicroelectronics
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.2mOhm at 60A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 67nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5600pF at 25V
Power Dissipation (Maximum) 235W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Part Number Series STP260
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805503-STP260N4F7
Ultra Librarian 3D Model Ultra Librarian STP260N4F7 CAD Model

Description

The STP260N4F7 is a cutting-edge power MOSFET device designed and manufactured by STMicroelectronics, a global semiconductor leader. This high-performance product is engineered to meet the demanding requirements of a wide range of power applications, offering an excellent blend of efficiency, reliability, and thermal performance.

Key Features

  • Low On-Resistance: The STP260N4F7 boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion systems.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 260A, this MOSFET can handle high current loads, making it suitable for robust power applications.
  • Enhanced Power Density: Thanks to its optimized cell layout, the STP260N4F7 offers increased power density, which allows for compact designs without compromising performance.
  • 100% Avalanche Tested: Each unit undergoes rigorous testing to ensure it can withstand high-energy pulses, providing enhanced ruggedness and reliability in harsh conditions.
  • Applications

    • Switch Mode Power Supplies (SMPS)
    • High-Efficiency DC/DC Converters
    • Motor Control Applications
    • Automotive Systems
    • Power Management Solutions

    Advanced Technology

    The STP260N4F7 is built using STMicroelectronics' advanced STripFET™ VII DeepGATE™ technology, which provides superior performance in terms of both switching speed and conductive losses. This technology, combined with the device's low threshold voltage, ensures optimal efficiency at low voltage operations, which is critical for energy-saving applications.

    Package and Environmental Compliance

    This MOSFET comes in a TO-220 package, known for its robustness and excellent thermal dissipation characteristics. The device is also compliant with RoHS and Halogen-free directives, reflecting STMicroelectronics' commitment to environmental sustainability.

    Conclusion

    The STP260N4F7 from STMicroelectronics represents a state-of-the-art solution for designers looking to optimize their power systems for efficiency, reliability, and compactness. With its advanced features and proven technology, it stands out as a top choice for a multitude of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2454 $67.3620
75+ $1.8425 $138.1875
110+ $1.7849 $196.3390
150+ $1.7274 $259.1100
195+ $1.6698 $325.6110
260+ $1.4971 $389.2460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 3,000 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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