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STP11N52K3

Part No STP11N52K3
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET | MOSFET N-CH 525V 10A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 525V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 510mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs 51nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1400pF at 50V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261659-STP11N52K3
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP11N52K3 CAD Model

Description

The STP11N52K3 is a state-of-the-art N-channel enhancement mode power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is designed to deliver high performance in terms of efficiency and reliability, making it an ideal choice for a wide range of applications, including switching regulators, switching converters, motor drivers, and power management solutions.

Key Features

  • High RDS(on) Efficiency: The STP11N52K3 boasts a low on-resistance, which translates into high efficiency and minimal energy loss during operation, making it suitable for energy-sensitive designs.
  • Advanced Technology: Utilizing STMicroelectronics' proprietary MDmesh™ K3 technology, this MOSFET offers an excellent figure of merit (FoM) and low gate charge (Qg), which enhances the overall performance in high-efficiency applications.
  • High Voltage Capability: With a maximum VDS of 525V, this MOSFET can handle high voltage applications with ease, providing a robust solution for power conversion systems.
  • Reduced Switching Losses: The device is optimized for reduced switching losses, which is critical for high-frequency power switching applications.
  • Improved Ruggedness: The STP11N52K3 is designed to be rugged and reliable, withstanding harsh operating conditions and providing a long operational lifespan.

Applications

The versatility of the STP11N52K3 MOSFET allows it to be utilized in a diverse array of applications. It is particularly well-suited for:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • High-efficiency DC/DC Converters
  • Power Management Functions
  • Motor Control Circuits

Product Specifications

Parameter Value
Drain-source Voltage (VDS) 525V
Continuous Drain Current (ID) 11A
Power Dissipation (PD) 150W
Operating Temperature Range -55°C to 150°C
Package TO-220

For designers and engineers looking for a robust and efficient power MOSFET, the STP11N52K3 from STMicroelectronics offers the perfect blend of performance and reliability to meet the needs of demanding power applications.

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