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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 355mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 704pF at 100V
Power Dissipation (Maximum) 52W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package PowerFlat (5x6) HV
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261312-STL16N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STL16N60M2 CAD Model

Description

STL16N60M2 - Power MOSFET by STMicroelectronics

The STL16N60M2 is a high-performance N-channel Power MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This advanced power MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies (SMPS), lighting, industrial, and automotive systems. The STL16N60M2 is a testament to STMicroelectronics' commitment to providing innovative semiconductor solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The STL16N60M2 features a low on-state resistance (R<sub>DS(on)), which helps to minimize conduction losses and improve overall system efficiency.
  • High Voltage Capability: With a drain-source voltage (V<sub>DSS) of 600V, this MOSFET is suitable for high voltage applications, providing a robust and reliable solution for power conversion and management.
  • Fast Switching Performance: The device offers fast switching speeds, which are essential for reducing switching losses and enhancing the performance of switching power supplies.
  • Improved Gate Charge: A low gate charge (Q<sub>G) ensures reduced switching losses, making the STL16N60M2 an excellent choice for high-frequency applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, guaranteeing the MOSFET's ability to withstand high energy pulses in the avalanche and commutation modes.

Applications

The versatility of the STL16N60M2 Power MOSFET makes it ideal for a variety of applications, including:

  • Switch-mode power supplies for computers, televisions, and other electronic devices
  • LED lighting solutions
  • DC-DC converters
  • Motor drives and inverters
  • Power management in industrial and automotive systems

STMicroelectronics has designed the STL16N60M2 with the latest technology to ensure high-quality performance and durability. Engineers and designers looking for a robust and efficient power MOSFET solution will find the STL16N60M2 to be a top-tier choice. With its exceptional features and proven reliability, the STL16N60M2 continues to set the standard for power MOSFETs in the industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.3712 $56.9088
58+ $1.9457 $112.8506
90+ $1.8848 $169.6320
123+ $1.8240 $224.3520
159+ $1.7632 $280.3488
213+ $1.5808 $336.7104
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 2,977 pieces
MOQ: 24 pcs
Order Increment : 1 piece
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