The STL15DN4F5 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This robust and efficient MOSFET is part of the STripFET F5 series, which is known for its low on-state resistance and high switching performance. The STL15DN4F5 is specifically engineered to address the demanding requirements of a wide range of power management applications.

Key Features

• Low On-Resistance: The device boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 8.4 mΩ at 10 V, minimizing conduction losses and improving overall efficiency.
• High Current Capability: With a continuous drain current (I<sub>D) of up to 15 A, the STL15DN4F5 can handle significant power without overheating, making it suitable for high-power applications.
• Low Gate Charge: A low gate charge (Q<sub>g) ensures fast switching, reducing switching losses and enabling high-frequency operation.
• Enhanced Thermal Performance: The STL15DN4F5 is encapsulated in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained applications.
• 100% Avalanche Tested: Guaranteed reliability and robustness in harsh conditions, as each device is thoroughly tested for avalanche ruggedness.

Applications

The STL15DN4F5 is versatile and can be used in a variety of applications, including:

• Switch mode power supplies (SMPS)
• Power management for computer and consumer applications
• DC-DC converters
• Motor control circuits
• Automotive systems and more

Environmental and Quality Certifications

STMicroelectronics is committed to environmental sustainability and quality. The STL15DN4F5 complies with various international standards, ensuring that it meets the highest levels of environmental and quality benchmarks:

• RoHS compliant
• Pb-free
• Halogen-free

With its impressive performance characteristics and compliance with environmental standards, the STL15DN4F5 from STMicroelectronics is an excellent choice for designers looking to enhance power efficiency and reliability in their next-generation electronic designs.