STH400N4F6-2 Power MOSFET by STMicroelectronics

The STH400N4F6-2 is a robust and efficient N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-performance MOSFET is part of ST's STripFET™ F6 series, which is well-known for its low on-resistance and low gate charge, making it an excellent choice for a wide range of power applications.

Key Features

• Low On-Resistance: The STH400N4F6-2 boasts an extremely low on-state resistance (R_DS(on)), which enhances its efficiency in conducting electricity and minimizes conduction losses.
• High Current Capability: With a continuous drain current (I_D) rating of 80A, this MOSFET can handle high current applications with ease, providing reliable performance even under strenuous conditions.
• High Switching Efficiency: The device's low gate charge (Q_g) translates to faster switching speeds, reducing switching losses and improving overall power efficiency.
• 100% Avalanche Tested: Ensuring reliability and robustness, the STH400N4F6-2 is thoroughly tested for avalanche performance, making it suitable for applications where ruggedness is a requirement.
• Enhanced Thermal Performance: The MOSFET's package is designed for optimal heat dissipation, maintaining stability and performance even under high temperature operations.

Applications

The STH400N4F6-2 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC-DC converters
• Motor control circuits
• Automotive applications
• LED lighting solutions

Package and Quality

The STH400N4F6-2 comes in a TO-247 package, which is known for its high power dissipation capabilities. The package's design also allows for easy mounting on heat sinks, further improving its thermal performance. Additionally, the product meets STMicroelectronics' high-quality standards, ensuring reliability and performance consistency.

Overall, the STH400N4F6-2 from STMicroelectronics represents a blend of performance, efficiency, and reliability, making it an ideal choice for designers looking to improve their power management systems with a state-of-the-art Power MOSFET.