STGWT38IH130D - STMicroelectronics IGBT

The STGWT38IH130D is a state-of-the-art insulated gate bipolar transistor (IGBT) developed by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance components. This IGBT is designed to efficiently handle high power and fast switching applications, making it an ideal choice for a variety of demanding electrical systems.

Key Features

• High Current Capability: The STGWT38IH130D is capable of conducting high currents, making it suitable for applications requiring robust power handling.
• Low On-Voltage Drop (Vce(on)): It boasts a low on-voltage drop, which enhances its efficiency by minimizing conduction losses.
• High Switching Speed: With its fast switching capabilities, this IGBT can operate at high frequencies, which is beneficial for applications such as inverters and converters.
• High Junction Operating Temperature: The device can operate at high temperatures, ensuring reliability even under thermal stress.
• Co-Packaged with Free Wheeling Diode: It comes co-packaged with a free wheeling diode, providing additional functionality and protection during operation.

Applications

The STGWT38IH130D is versatile and can be used in a wide array of applications, including:

• Motor Drives
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction Circuits
• Induction Heating
• Renewable Energy Inverters

Technical Specifications

The technical specifications of the STGWT38IH130D include a collector-emitter voltage (Vce) of 1300V, collector current (Ic) of 38A, and a maximum junction temperature of 175°C. These specifications reflect the device's ability to support high-voltage and high-current applications while maintaining thermal stability.

STMicroelectronics' commitment to innovation is embodied in the STGWT38IH130D, offering designers and engineers a reliable, high-performance IGBT solution for their advanced power management needs.