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STGW40V60DF

Part No STGW40V60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 80A 283W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 40A
Maximum Power Dissipation 283W
Total Switching Energy(Ets) 456μJ (on), 411μJ (off)
Input Type Standard
Gate Charge 226nC
Turn-on and Turn-off delay time 52ns/208ns
Testing Conditions 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) 41ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 1103062-STGW40V60DF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW40V60DF CAD Model

Description

STGW40V60DF - IGBT from STMicroelectronics

The STGW40V60DF is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, designed to meet the demands of high-efficiency and high-speed switching applications. This device is a part of ST's IGBT portfolio that features advanced Field Stop technology, which significantly enhances the performance by reducing on-state voltage drop and improving switching speeds.

Key Features:

  • Voltage Rating: The STGW40V60DF is rated for a maximum collector-emitter voltage of 600V, making it suitable for various medium to high voltage applications.
  • Current Capability: It has a collector current rating of 40A at 25°C, ensuring it can handle significant power levels.
  • Low On-Resistance: The device offers a low on-state voltage, which translates to reduced conduction losses and improved efficiency.
  • High-Speed Switching: With its fast switching characteristics, the STGW40V60DF is ideal for applications requiring high switching frequencies.
  • Short-Circuit Rating: It features a short-circuit withstand time of 10μs, providing robustness and reliability under fault conditions.
  • Co-Packaged Diode: The IGBT comes with a free-wheeling diode co-packaged, which is optimized for the same switching speeds, further simplifying design and enhancing performance.

Applications:

The STGW40V60DF is versatile and can be used in a wide array of applications, including but not limited to:

  • Motor drives and controls
  • Uninterruptible Power Supplies (UPS)
  • Power inverters for solar and wind energy systems
  • Induction heating and welding equipment
  • Electric vehicle (EV) charging stations

Quality and Reliability:

STMicroelectronics is committed to delivering high-quality products. The STGW40V60DF is no exception and is manufactured to meet the highest industry standards for performance and reliability. It is designed to ensure a long operational life and stable operation across a range of environmental conditions.

Overall, the STGW40V60DF IGBT from STMicroelectronics is an excellent choice for designers looking to enhance efficiency and performance in high-power and high-speed switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.9152 $54.0672
25+ $4.0330 $100.8250
39+ $3.9069 $152.3691
53+ $3.7809 $200.3877
69+ $3.6549 $252.1881
92+ $3.2768 $301.4656
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Availability: 2,089 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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