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STGW40H65DFB

Part No STGW40H65DFB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 80A 283W TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 40A
Power - Max 283W
Switching Energy 498μJ (on), 363μJ (off)
Input Type Standard
Gate Charge 210nC
Td (on/off) @ 25°C 40ns/142ns
Test Condition 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) 62ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Manufacturer Homepage www.st.com
Win Source Part Number 727288-STGW40H65DFB
Popularity Medium
Supply and Demand Status Balance
Family Name STGW40H65DFB
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian STGW40H65DFB CAD Model

Description

STGW40H65DFB - High-Efficiency IGBT from STMicroelectronics

The STGW40H65DFB is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed to offer a superior combination of high efficiency, fast switching, and robust thermal performance. This IGBT is part of ST's advanced trench gate field-stop technology, which is engineered to cater to a wide range of high voltage applications, particularly those requiring high efficiency and reliability such as solar inverters, UPS systems, and motor drives.

With a maximum collector-emitter voltage (V<sub>CE) of 650V and a continuous collector current (I<sub>C) rating of 40A at 25°C, the STGW40H65DFB is capable of handling significant power levels. The device's low on-state voltage drop (V<sub>CE(sat)) reduces conduction losses, enhancing overall system efficiency, especially in hard-switching applications.

One of the most notable features of the STGW40H65DFB is its high-speed switching capabilities. This is facilitated by its co-packaged fast and soft recovery anti-parallel diode, which minimizes switching losses and improves performance during high-frequency operations. Furthermore, the IGBT's short-circuit withstand time is rated at 10µs, providing a robust safety margin for transient conditions.

The device is encapsulated in a TO-247 long leads package, which is known for excellent thermal performance and mechanical ruggedness. The package ensures that the IGBT can reliably operate at high temperatures, with a maximum junction temperature (T<sub>J) of 175°C. This high thermal threshold allows for greater flexibility in thermal management and can reduce the need for extensive cooling systems, potentially lowering the overall design cost.

STMicroelectronics has also equipped the STGW40H65DFB with a positive temperature coefficient of V<sub>CE(sat), which simplifies the design of parallel IGBT configurations by naturally balancing the current distribution among IGBTs in the same phase leg.

In summary, the STGW40H65DFB IGBT is a high-performance component that offers an optimal solution for designers looking to improve the efficiency, reliability, and thermal management of their high-voltage, high-power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3574 $51.8628
52+ $1.9343 $100.5836
81+ $1.8738 $151.7778
111+ $1.8134 $201.2874
143+ $1.7529 $250.6647
191+ $1.5716 $300.1756
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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