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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 220A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 30A
Maximum Power Dissipation 250W
Total Switching Energy(Ets) 333μJ (on), 537μJ (off)
Input Type Standard
Gate Charge 126nC
Turn-on and Turn-off delay time 33ns/178ns
Testing Conditions 390V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 45ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Win Source Part Number 083541-STGW39NC60VD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGW39NC60VD CAD Model

Description

STGW39NC60VD - N-CHANNEL 600V - 39A - TO-247 PowerMesh™ IGBT

The STGW39NC60VD is a high-performance N-channel IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed to combine the high-speed performance of MOSFETs with the high voltage and current handling capabilities of bipolar transistors. The STGW39NC60VD is a part of STMicroelectronics' PowerMesh™ IGBTs, which are well-known for their efficiency in power conversion applications.

With a maximum collector-emitter voltage of 600V and a collector current rating of 39A at 25°C, this IGBT is suitable for a wide range of high-power applications. These include motor drives, uninterruptible power supplies (UPS), induction heating, and power factor correction circuits. Its robust design ensures reliability and durability, making it a preferred choice for demanding environments.

The STGW39NC60VD features an advanced trench gate field-stop structure that optimizes the device's on-voltage and dynamic performance, resulting in lower conduction and switching losses. This structure enhances the device's efficiency, making it an excellent choice for energy-sensitive applications. Additionally, the IGBT's high current density and low thermal resistance contribute to its exceptional thermal performance, allowing for cooler and more stable operation.

Other key features of the STGW39NC60VD include a fast recovery anti-parallel diode, which minimizes switching losses and improves efficiency. The device also has a high-frequency operation capability, which is essential for applications requiring fast switching. The TO-247 package provides an industry-standard outline that ensures compatibility with many circuit designs and easy mounting on heat sinks for thermal management.

Overall, the STGW39NC60VD IGBT from STMicroelectronics offers a combination of high efficiency, reliability, and performance, making it an ideal choice for designers and engineers looking to optimize their high-voltage and high-current applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7829 $53.4870
70+ $1.4629 $102.4030
110+ $1.4171 $155.8810
150+ $1.3714 $205.7100
190+ $1.3257 $251.8830
255+ $1.1886 $303.0930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 9,974 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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