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NGTB50N65S1WG

Part No NGTB50N65S1WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT - Inverter Welding
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 140A
Current - Collector Pulsed (Icm) 140A
Vce(on) (Maximum) @ Vge, Ic 2.45V @ 15V, 50A
Power - Max 300W
Switching Energy 1.25mJ (on), 530μJ (off)
Input Type Standard
Gate Charge 128nC
Td (on/off) @ 25°C 75ns/128ns
Test Condition 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1231163-NGTB50N65S1WG
Manufacturer Homepage www.onsemi.com
Family Name NGTB50N65S1WG
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NGTB50N65S1WG CAD Model

Description

ON Semiconductor NGTB50N65S1WG: A High-Performance IGBT

The ON Semiconductor NGTB50N65S1WG is a cutting-edge insulated gate bipolar transistor (IGBT) that is designed to deliver high efficiency and power density in a wide range of applications. This IGBT is part of ON Semiconductor's high-performance portfolio, offering a robust and reliable solution for engineers looking to optimize their power management systems.

Outstanding Electrical Performance

The NGTB50N65S1WG boasts an impressive collector-emitter voltage (Vce) of 650V and a continuous collector current (Ic) of 50A at 25°C. These specifications ensure that the device can handle high power levels while maintaining stable operation. Furthermore, the IGBT features a low on-state voltage drop, which contributes to its high efficiency, reducing thermal stress and enhancing system reliability.

Advanced Technology for Enhanced Efficiency

Utilizing ON Semiconductor's proprietary trench gate field-stop technology, the NGTB50N65S1WG offers a fine balance between switching speed and saturation voltage, leading to reduced switching losses. This technology is particularly beneficial in applications where efficiency is paramount, such as in inverters for solar energy systems, uninterruptible power supplies (UPS), and electric vehicle (EV) charging stations.

Robust Thermal Management

The device is encapsulated in a TO-247 package, which is known for its excellent thermal characteristics. This packaging allows for effective heat dissipation, ensuring that the IGBT operates within its intended temperature range even under high power operation. The TO-247 package also provides a high level of isolation and durability, making the NGTB50N65S1WG suitable for industrial environments.

Applications

The versatility of the NGTB50N65S1WG IGBT makes it ideal for a variety of applications. It is particularly well-suited for high-frequency circuits and power conversion systems where efficiency and thermal performance are critical. Some common applications include motor drives, power inverters, and switching power supplies.

Conclusion

ON Semiconductor's NGTB50N65S1WG IGBT is a high-performance solution for modern power management challenges. With its outstanding electrical characteristics, advanced technology, and robust thermal management, this IGBT is poised to enhance the performance and reliability of a wide array of power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8863 $60.6123
49+ $2.3678 $116.0222
76+ $2.2938 $174.3288
105+ $2.2199 $233.0895
135+ $2.1460 $289.7100
181+ $1.9242 $348.2802
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Availability: 3,890 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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