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STGW28IH125DF

Part No STGW28IH125DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1250V 60A 375W TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features IGBT Trench Field Stop 1250 V 60 A 375 W Through Hole TO-247
Manufacturer STMicroelectronics
Package Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247
Family Name STGW28
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-14560-5, STGW28IH125DF-ND, -497-14560-5
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898003-STGW28IH125DF
Ultra Librarian 3D Model Ultra Librarian STGW28IH125DF CAD Model

Description

STGW28IH125DF IGBT from STMicroelectronics

The STGW28IH125DF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This IGBT is designed for a wide range of high-efficiency applications, including motor drives, renewable energy inverters, UPS systems, and switch-mode power supplies.

The STGW28IH125DF features a robust and advanced trench gate field-stop structure, which provides superior performance in terms of efficiency and reliability. It is capable of operating at high frequencies while maintaining low conduction and switching losses, making it an excellent choice for energy-sensitive applications.

Key Specifications:

  • Maximum Collector-Emitter Voltage (V<sub>CE): 1250V - This high breakdown voltage ensures safe operation under high voltage conditions.
  • Collector Current (I<sub>C): 28A - The device can handle significant current, suitable for a variety of power applications.
  • Low On-Resistance: The low on-resistance of the IGBT minimizes conduction losses and improves overall efficiency.
  • High Switching Speed: The fast switching capability of the STGW28IH125DF enhances performance in applications requiring quick transitions.
  • Operating Junction Temperature: The device is rated for a wide operating temperature range, ensuring reliability under varying environmental conditions.
  • Co-Packaged Free Wheeling Diode: The inclusion of a free-wheeling diode in the package provides efficient and convenient anti-parallel functionality.

The STGW28IH125DF also integrates several features for enhanced robustness, including a high ruggedness capability and a low thermal resistance. This ensures that the device can withstand tough conditions without performance degradation.

For ease of use, this IGBT comes in a TO-247 long leads package, which is widely used in industry and compatible with standard mounting techniques. This makes the integration of the STGW28IH125DF into existing designs straightforward and cost-effective.

With its combination of high efficiency, reliability, and user-friendly packaging, the STGW28IH125DF from STMicroelectronics is an excellent choice for designers who require a high-performance IGBT for their power conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.1803 $50.2621
17+ $5.8915 $100.1555
27+ $5.7074 $154.0998
37+ $5.5233 $204.3621
47+ $5.3392 $250.9424
63+ $4.7869 $301.5747
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Availability: 50 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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