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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features IGBT - 600 V 60 A 200 W Through Hole TO-220
Manufacturer STMicroelectronics
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STGP35
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -497-13584-5, 497-13584-5
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898001-STGP35HF60W
Ultra Librarian 3D Model Ultra Librarian STGP35HF60W CAD Model

Description

STGP35HF60W - IGBT - STMicroelectronics

The STGP35HF60W is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, designed to handle a wide range of high-power applications. This IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors, making it an ideal choice for efficient and fast-switching applications.

Key Features

  • High Current Capability: The device is capable of handling continuous currents up to 35A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage rating of 600V, this IGBT can be used in circuits with high operational voltages, offering robust performance for industrial applications.
  • Low On-Voltage Drop (Vce(on)): The STGP35HF60W features a low on-voltage drop, which translates to reduced power losses and improved efficiency during operation.
  • Short-Circuit Rating: The device has a short-circuit withstand time of 10 µs, providing a level of protection against sudden electrical faults and enhancing system reliability.
  • Co-Packaged with Free Wheeling Diode: The IGBT comes co-packaged with an ultra-fast soft recovery anti-parallel diode, which further improves performance during switching and reduces electromagnetic interference (EMI).

Applications

The STGP35HF60W is suitable for a diverse range of applications, including:

  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Inductive Heating
  • Welding Equipment

Technical Specifications

Some of the technical specifications of the STGP35HF60W include a maximum collector current (Ic) of 35A, collector-emitter voltage (Vce) of 600V, and a typical gate charge (Qg) that ensures efficient switching performance. The device is also characterized by a wide operating junction temperature range, making it suitable for extreme environmental conditions.

With its robust design and high-performance characteristics, the STGP35HF60W from STMicroelectronics is an excellent choice for designers looking to improve the efficiency and reliability of their high-power electronic systems.

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