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STGF10NB60SD

Part No STGF10NB60SD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 23A 25W TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 23A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 1.75V @ 15V, 10A
Maximum Power Dissipation 25W
Total Switching Energy(Ets) 600μJ (on), 5mJ (off)
Input Type Standard
Gate Charge 33nC
Turn-on and Turn-off delay time 700ns/1.2μs
Testing Conditions 480V, 10A, 1 kOhm, 15V
Reverse Recovery Time (trr) 37ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Win Source Part Number 066373-STGF10NB60SD
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGF10NB60SD CAD Model

Description

STGF10NB60SD - IGBT - STMicroelectronics

The STGF10NB60SD is a high-performance insulated gate bipolar transistor (IGBT) manufactured by STMicroelectronics. This IGBT is designed to offer a perfect blend of low conduction and switching losses, making it an ideal choice for a wide range of high-efficiency applications. It is part of ST's STPOWER family, which is known for providing robust and reliable power devices for industrial, consumer, and automotive markets.

One of the key features of the STGF10NB60SD is its trench gate field-stop structure. This advanced technology optimizes the device for fast switching operations, while maintaining a low on-state voltage drop (V<sub>CE(sat)). The result is reduced power dissipation and improved overall efficiency, especially in hard-switching applications. The IGBT is rated for a maximum collector-emitter voltage of 600V, making it suitable for high voltage systems.

The STGF10NB60SD has a collector current rating of 10A, which ensures it can handle significant power levels. Its maximum junction temperature is specified at 175°C, providing a good thermal headroom for various operating conditions. The device also features a co-packaged fast recovery diode, which is optimized for the high-speed switching behavior of the IGBT, further enhancing performance and simplifying circuit design.

With a low gate charge and minimal internal capacitances, the STGF10NB60SD offers excellent switching performance. This makes it an excellent choice for applications such as motor drives, uninterruptible power supplies (UPS), inverter circuits, and power factor correction (PFC) systems. Its robustness is also reflected in its high ruggedness against hard commutations and its capability to withstand high surge currents.

STMicroelectronics provides the STGF10NB60SD in a TO-220 FullPAK package, which is well-suited for through-hole mounting. This package is designed to offer improved thermal performance and simplified assembly processes. The device also complies with RoHS and Halogen-free standards, ensuring it meets current environmental regulations for electronic components.

Overall, the STGF10NB60SD IGBT from STMicroelectronics is a powerful and reliable component that offers designers a high-performance solution for their power-switching requirements. Its combination of efficiency, speed, and robustness makes it an excellent choice for a multitude of power electronics applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6265 $56.9275
75+ $1.3346 $100.0950
120+ $1.2929 $155.1480
160+ $1.2512 $200.1920
210+ $1.2095 $253.9950
280+ $1.0844 $303.6320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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