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STGD20N40LZ

Part No STGD20N40LZ
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 390V 25A 125W DPAK / IGBT 390 V 25 A 125 W Surface Mount DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, PowerMESH™
Package Tape & Reel
Voltage - Collector Emitter Breakdown (Max) 390 V
Current - Collector (Ic) (Max) 25 A
Current - Collector Pulsed (Icm) 40 A
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 6A
Power - Max 125 W
Input Type Logic
Gate Charge 24 nC
Td (on/off) @ 25°C 700ns/4.3µs
Test Condition 300V, 10A, 1kOhm, 5V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number STGD20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-13953-6,497-13953-2,-497-13953-1,497-13953-1,-497-13953-2,497-13953-6,STGD20N40LZ-ND
Standard Package 2,500
Win Source Part Number 1096881-STGD20N40LZ
Ultra Librarian 3D Model Ultra Librarian STGD20N40LZ CAD Model

Description

STGD20N40LZ - STMicroelectronics N-Channel Power MOSFET

The STGD20N40LZ is a high-performance N-channel power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is part of ST's MDmesh™ K5 series, which is well-known for its excellent RDS(on) per area and reduced gate charge. These features make it an ideal choice for high-efficiency solutions in power supply and conversion systems.

With a drain-source voltage (VDS) of 400V, the STGD20N40LZ is particularly suited for applications that require high voltage capabilities. Its continuous drain current (ID) of 20A ensures that it can handle significant power without overheating, while the low threshold voltage (VGS(th)) provides improved control and drive characteristics.

The device is built using ST's advanced STripFET™ technology, which gives it a low on-resistance (RDS(on)) of just 0.165Ω. This low RDS(on) translates into reduced conduction losses, making the STGD20N40LZ a highly efficient option for power management tasks. Additionally, the MOSFET features a fast switching speed, further enhancing its performance in switching applications.

The STGD20N40LZ is encapsulated in a TO-252 (DPAK) package, which is designed to offer a compact footprint while still providing excellent thermal performance. The package is compatible with standard surface-mount technology (SMT) processes, making it easy to integrate into automated manufacturing lines.

Safety and reliability are also key features of this power MOSFET. It includes a robust body diode that can handle high surge currents, and it is 100% avalanche tested, ensuring it can withstand tough conditions. The device is also compliant with the stringent industrial standards, including RoHS and Halogen-free compliance, which reflects STMicroelectronics' commitment to environmental sustainability.

Overall, the STGD20N40LZ is a versatile and efficient solution for designers looking to improve the performance of their power conversion systems. Whether it's for power supplies, lighting applications, or any other system requiring a high-voltage, high-efficiency MOSFET, the STGD20N40LZ is an excellent choice.

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