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STGD20N40LZ

Part No STGD20N40LZ
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 390V 25A 125W DPAK  /  IGBT 390 V 25 A 125 W Surface Mount DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, PowerMESH™
Package Tape & Reel
Voltage - Collector Emitter Breakdown (Max) 390 V
Current - Collector (Ic) (Max) 25 A
Current - Collector Pulsed (Icm) 40 A
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 6A
Power - Max 125 W
Input Type Logic
Gate Charge 24 nC
Td (on/off) @ 25°C 700ns/4.3µs
Test Condition 300V, 10A, 1kOhm, 5V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number STGD20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-13953-6,497-13953-2,-497-13953-1,497-13953-1,-497-13953-2,497-13953-6,STGD20N40LZ-ND
Standard Package 2,500
Win Source Part Number 1096881-STGD20N40LZ
Ultra Librarian 3D Model Ultra Librarian STGD20N40LZ CAD Model

Description

STGD20N40LZ - STMicroelectronics N-Channel Power MOSFET

The STGD20N40LZ is a high-performance N-channel power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is part of ST's MDmesh™ K5 series, which is well-known for its excellent RDS(on) per area and reduced gate charge. These features make it an ideal choice for high-efficiency solutions in power supply and conversion systems.

With a drain-source voltage (V<sub>DS) of 400V, the STGD20N40LZ is particularly suited for applications that require high voltage capabilities. Its continuous drain current (I<sub>D) of 20A ensures that it can handle significant power without overheating, while the low threshold voltage (V<sub>GS(th)) provides improved control and drive characteristics.

The device is built using ST's advanced STripFET™ technology, which gives it a low on-resistance (RDS(on)) of just 0.165Ω. This low RDS(on) translates into reduced conduction losses, making the STGD20N40LZ a highly efficient option for power management tasks. Additionally, the MOSFET features a fast switching speed, further enhancing its performance in switching applications.

The STGD20N40LZ is encapsulated in a TO-252 (DPAK) package, which is designed to offer a compact footprint while still providing excellent thermal performance. The package is compatible with standard surface-mount technology (SMT) processes, making it easy to integrate into automated manufacturing lines.

Safety and reliability are also key features of this power MOSFET. It includes a robust body diode that can handle high surge currents, and it is 100% avalanche tested, ensuring it can withstand tough conditions. The device is also compliant with the stringent industrial standards, including RoHS and Halogen-free compliance, which reflects STMicroelectronics' commitment to environmental sustainability.

Overall, the STGD20N40LZ is a versatile and efficient solution for designers looking to improve the performance of their power conversion systems. Whether it's for power supplies, lighting applications, or any other system requiring a high-voltage, high-efficiency MOSFET, the STGD20N40LZ is an excellent choice.

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