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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 25A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 7A
Maximum Power Dissipation 80W
Total Switching Energy(Ets) 82μJ (on), 155μJ (off)
Input Type Standard
Gate Charge 34.4nC
Turn-on and Turn-off delay time 22.5ns/116ns
Testing Conditions 390V, 7A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 1103015-STGD14NC60KT4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STGD14NC60K
Introduction Date July 12, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian STGD14NC60KT4 CAD Model

Description

STGD14NC60KT4 - N-Channel IGBT from STMicroelectronics

The STGD14NC60KT4 is a high-performance N-channel IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is a part of ST's PowerMESH™ IGBTs series, which are specifically engineered to combine the high efficiency of MOSFETs with the high current and low saturation voltage of bipolar transistors.

Key Features

  • High Current Capability: The STGD14NC60KT4 is capable of handling significant current levels, making it suitable for a variety of power applications.
  • Low On-Voltage Drop (Vce(on)): This IGBT has a low on-state voltage drop, which improves efficiency by minimizing power dissipation during operation.
  • High Switching Speed: The device features high-speed switching performance, which is essential for reducing switching losses in high-frequency applications.
  • Enhanced Ruggedness: The IGBT is designed to withstand harsh operating conditions, ensuring reliability and longevity in demanding environments.
  • Co-Packaged with Free Wheeling Diode: The STGD14NC60KT4 comes with an integrated fast recovery diode, which provides protection against reverse voltage transients and simplifies circuit design.

Applications

The STGD14NC60KT4 is versatile and can be used in a wide array of applications, including:

  • Switching power supplies
  • Motor control systems
  • Power inverters
  • Power factor correction circuits
  • Induction heating
  • Uninterruptible power supplies (UPS)

Technical Specifications

  • Collector-Emitter Voltage (Vces): 600V
  • Collector Current (Ic): 14A
  • Power Dissipation (Pd): 30W
  • Operating Junction Temperature (Tj): -55°C to +150°C
  • Package: DPAK (TO-252)

The STGD14NC60KT4 IGBT is a testament to STMicroelectronics' commitment to providing innovative, high-performance semiconductor technologies. With its robust design and advanced features, this IGBT is an excellent choice for designers seeking to enhance the efficiency and reliability of their power management systems.

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Quantity Unit Price Ext. Price
30+ $1.7616 $52.8480
70+ $1.4455 $101.1850
110+ $1.4003 $154.0330
150+ $1.3551 $203.2650
195+ $1.3099 $255.4305
260+ $1.1744 $305.3440
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Availability: 42,050 pieces
MOQ: 30 pcs
Order Increment : 1 piece
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