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STGD10NC60KDT4

Part No STGD10NC60KDT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 20A 62W DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 20A
Pulsed Collector Current 30A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 5A
Maximum Power Dissipation 62W
Total Switching Energy(Ets) 55μJ (on), 85μJ (off)
Input Type Standard
Gate Charge 19nC
Turn-on and Turn-off delay time 17ns/72ns
Testing Conditions 390V, 5A, 10 Ohm, 15V
Reverse Recovery Time (trr) 22ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Win Source Part Number 031195-STGD10NC60KDT4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGD10NC60KDT4 CAD Model

Description

STGD10NC60KDT4 - IGBT from STMicroelectronics

The STGD10NC60KDT4 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) produced by STMicroelectronics, a leader in the semiconductor industry. This device is designed to meet the demands of high-efficiency, fast-switching power applications. It is particularly suitable for a wide range of uses, including motor drives, uninterruptible power supplies (UPS), inverter circuits, and general-purpose power amplification and switching.

Key Features

  • High Voltage Capability: The STGD10NC60KDT4 can handle a maximum collector-emitter voltage (VCE) of 600V, making it suitable for applications with high voltage requirements.
  • Low On-Voltage Drop (VCE(sat)): With a low on-voltage drop, this IGBT ensures high efficiency in power conversion, reducing thermal stress and increasing reliability.
  • High-Speed Switching: The device's fast-switching capabilities minimize energy losses during transition periods, contributing to overall system efficiency.
  • High Current Rating: The IGBT has a continuous collector current (IC) rating of 10A, enabling it to handle high power levels.
  • Tight Parameter Distribution: The STGD10NC60KDT4 offers a more predictable and uniform performance thanks to the tight distribution of its parameters.
  • Co-Packaged Diode: It includes a free-wheeling diode, which is co-packaged with the IGBT, providing a convenient and space-saving solution for circuits that require both components.

Advanced Technology

The device is manufactured using STMicroelectronics' advanced IGBT technology, which combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor. This results in superior electrical performance that is optimized for high-frequency operation and minimal conduction losses.

Applications

Due to its robustness and versatility, the STGD10NC60KDT4 is an excellent choice for a variety of applications. It is widely used in power management systems where efficient energy conversion is critical. Its high-speed switching and high current capacity make it an ideal component for power inverters, converters, and PWM (Pulse Width Modulation) systems. Additionally, it is commonly found in consumer electronics, automotive systems, and industrial automation equipment where reliability and performance are paramount.

With the STGD10NC60KDT4, designers can achieve a compact, efficient, and high-performance design, ensuring that end-users benefit from reliable and energy-efficient electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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