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STGB10NB40LZT4

Part No STGB10NB40LZT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series PowerMESH
Packaging Reel - TR
Voltage - Collector Emitter Breakdown (Maximum) 440V
Current - Collector (Ic) (Maximum) 20A
Current - Collector Pulsed (Icm) 40A
Vce(on) (Maximum) @ Vge, Ic 1.8V @ 4.5V, 10A
Power - Max 150W
Switching Energy 2.4mJ (on), 5mJ (off)
Input Type Standard
Gate Charge 28nC
Td (on/off) @ 25°C 1.3μs/8μs
Test Condition 328V, 10A, 1 kOhm, 5V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Package D2PAK
Win Source Part Number 1261002-STGB10NB40LZT4
Manufacturer Homepage www.st.com
Family Name STGB10NB40LZ
Introduction Date August 07, 2003
ECCN EAR99
Country of Origin China
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGB10NB40LZT4 CAD Model

Description

STGB10NB40LZT4 - IGBT from STMicroelectronics

The STGB10NB40LZT4 is a high-performance insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This IGBT is tailored for efficient and reliable performance in a wide range of power switching applications. It is particularly well-suited for high-speed switching applications due to its fast switching speed and low conduction losses.

The STGB10NB40LZT4 features a maximum collector-emitter voltage (VCE) of 400V and a continuous collector current (IC) rating of 10A at 25°C. Its low on-state voltage drop (VCE(sat)) helps in reducing the power dissipation during operation, thereby enhancing the overall efficiency of the system it is used in.

This IGBT integrates STMicroelectronics' advanced trench gate field-stop technology, which provides an optimized trade-off between switching performance and on-state behavior. This technology allows for a reduction in total switching energy (Eoff + Eon) and minimizes the turn-off energy (Eoff), making the STGB10NB40LZT4 an excellent choice for resonant or soft-switching applications.

Furthermore, the STGB10NB40LZT4 is housed in a D2PAK package, which is known for its compact size and excellent thermal performance. This package design enables efficient heat dissipation and allows for higher power density designs. The device also features a co-packaged freewheeling diode, which provides additional protection against reverse voltage transients and enhances the reliability of the application.

Designed with robustness in mind, the STGB10NB40LZT4 is capable of withstanding harsh operating conditions and is characterized by its high ruggedness and exceptional reliability. It is a perfect choice for applications such as motor drives, uninterruptible power supplies (UPS), power factor correction (PFC) circuits, induction heating, and other high-frequency converters.

In summary, the STGB10NB40LZT4 from STMicroelectronics is a state-of-the-art IGBT that offers a combination of fast switching, high efficiency, and robust performance, making it an ideal component for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
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Availability: 15,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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