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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 28A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 14.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2590pF at 100V
Power Dissipation (Maximum) 35W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260970-STF34N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF34N65M5 CAD Model

Description

STF34N65M5 - N-channel Power MOSFET by STMicroelectronics

The STF34N65M5 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This power MOSFET is part of the MDmesh™ M5 series, which is renowned for its excellent energy efficiency and high power density. It is specifically engineered to address the rigorous demands of today's power supply applications, including switched-mode power supplies (SMPS), lighting applications, welding equipment, and high-performance drives.

With a maximum drain-source voltage (V<sub>DS) of 650V, the STF34N65M5 is well-suited for high voltage applications, ensuring robustness and reliability. It features a low on-resistance (R<sub>DS(on)) of just 0.095 Ω, minimizing conduction losses and enhancing overall system efficiency. This MOSFET also boasts a low gate charge (Q<sub>g), which translates to reduced switching losses and faster switching performance, making it ideal for high-frequency circuits.

The STF34N65M5 comes in a TO-220FP package, which provides a good balance between compactness and thermal performance. Its maximum continuous drain current (I<sub>D) is rated at 23A, allowing it to handle significant power without overheating. Additionally, the device is characterized by a high junction temperature capability (T<sub>J) of 150°C, offering stable performance even under extreme operating conditions.

One of the key features of the STF34N65M5 is its MDmesh™ M5 technology, which integrates a vertical structure that enhances carrier mobility while minimizing on-state resistance and dynamic losses. This technology makes the MOSFET an excellent choice for applications requiring high efficiency and power density.

STMicroelectronics has equipped the STF34N65M5 with Zener-protected gate, providing intrinsic protection against electrostatic discharge (ESD) and enhancing the device's ruggedness. This feature is especially critical in industrial environments where ESD can cause significant damage to electronic components.

In summary, the STF34N65M5 is a robust, high-efficiency N-channel Power MOSFET that offers a compelling solution for designers looking to improve the performance and reliability of their power management systems. Its combination of low on-resistance, high voltage capability, and fast switching speeds make it a versatile component for a wide range of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.4799 $62.3995
11+ $10.2400 $112.6400
17+ $9.9200 $168.6400
24+ $9.6000 $230.4000
31+ $9.2800 $287.6800
41+ $8.3200 $341.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 6,000 pieces
MOQ: 5 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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