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Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 14A, 10V
Vgs(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 54nC at 10V
Maximum Vgs ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 100V
Power Dissipation (Maximum) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Part Number Series STF35N
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 814141-STF35N60DM2
Ultra Librarian 3D Model Ultra Librarian STF35N60DM2 CAD Model

Description

STF35N60DM2 - A High-Performance MOSFET from STMicroelectronics

The STF35N60DM2 is a state-of-the-art N-channel Power MOSFET designed by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is part of the MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and performance in a wide range of applications.

With a voltage rating of 600V, the STF35N60DM2 is engineered to withstand high voltage conditions, making it an ideal choice for high-performance switching applications. The device boasts a low on-resistance of typically 0.135 ohms, which enhances its efficiency by minimizing conduction losses.

The STF35N60DM2 incorporates STMicroelectronics' second generation of MDmesh™ technology, which combines a vertical structure with a proprietary diffusion process. This innovative approach results in reduced on-state resistance and lower gate charge, leading to superior switching performance and lower power dissipation. This makes the STF35N60DM2 particularly suitable for high-efficiency power supplies, lighting applications, welding equipment, solar inverters, and other energy-sensitive electronics.

Encased in a TO-220FP package, the STF35N60DM2 ensures a robust and reliable thermal performance, making it capable of handling high current and power levels without compromising on longevity. Its package is designed to offer an optimal trade-off between conduction and switching losses, further contributing to the overall efficiency of the system it is integrated into.

For designers and engineers, the STF35N60DM2 offers a range of features that simplify circuit design and enhance system reliability. These features include a fast recovery diode, which is essential for high-speed switching and reducing electromagnetic interference (EMI). Additionally, the device is 100% avalanche tested, ensuring ruggedness and reliability in the face of challenging conditions.

With its combination of high voltage capability, low on-resistance, and exceptional switching performance, the STF35N60DM2 from STMicroelectronics is a compelling choice for designers seeking to optimize the efficiency and reliability of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.9207 $68.8898
33+ $4.0375 $133.2375
50+ $3.9114 $195.5700
69+ $3.7850 $261.1650
89+ $3.6590 $325.6510
119+ $3.2805 $390.3795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 35,000 pieces
MOQ: 14 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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