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STF11NM60N

Part No STF11NM60N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET | MOSFET N-CH 600V 10A TO-220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 850pF at 50V
Power Dissipation (Maximum) 25W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260931-STF11NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF11NM60N CAD Model

Description

STF11NM60N - N-channel 600 V, 0.38 ohm, 11 A MDmesh™ II Plus Low Qg Power MOSFET

The STF11NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, designed specifically for high-efficiency power conversion applications. This device is part of the MDmesh™ II Plus series, which is renowned for its excellent on-state resistance (RDS(on)) and low gate charge (Qg), making it an ideal choice for a wide range of electronic circuits, including switching power supplies, lighting applications, and power management solutions.

Constructed with STMicroelectronics' innovative MDmesh™ II Plus technology, the STF11NM60N MOSFET features a drain-source voltage (VDS) of 600 V, which allows it to handle high voltage levels with ease. This characteristic is particularly beneficial in applications where high voltage operation is essential. The device's on-resistance is remarkably low at just 0.38 ohms, ensuring efficient power handling and reduced heat dissipation during operation.

With a continuous drain current (ID) of 11 A, the STF11NM60N is capable of driving significant current, making it suitable for demanding applications that require robust current handling capabilities. Additionally, its low gate charge enhances the MOSFET's switching performance, which is critical for reducing switching losses and improving overall system efficiency.

The STF11NM60N comes in a TO-220FP package, which provides a good balance between thermal performance and compactness. This package is widely used in the industry and is well-suited for through-hole mounting, making it easy to integrate into various circuit designs.

Key features of the STF11NM60N include:

  • Low threshold drive
  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Zener-protected

Overall, the STF11NM60N from STMicroelectronics is a robust and reliable MOSFET choice for designers looking to optimize power efficiency and thermal management in their electronic designs. Its combination of high voltage capacity, low on-resistance, and efficient switching characteristics make it a versatile component for a variety of power conversion applications.

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