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Same model may have multiple batches, images only for reference.
IRFD310PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD310PBF

Part No IRFD310PBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 400V 350MA 4-DIP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 350mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.6Ohm at 210mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 17nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 170pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187565-IRFD310PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFD310PBF CAD Model

Description

The IRFD310PBF is an N-channel MOSFET with a drain-source breakdown voltage of 400V and a continuous drain current of 350mA.

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 350mA
  • On-Resistance: 3.6Ohm @ 210mA and 10V
  • Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 17nC @ 10V
  • Input Capacitance: 170pF @ 25V
  • Application: Power supplies, motor control, and lighting
  • Manufacturer: Vishay Siliconix
  • Package: 4-DIP
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 2,500

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485+ $0.7204 $349.3940
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