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STD4N80K5

Part No STD4N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Ultra low gate charge
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH5
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 10.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 175pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 60W (Tc)
Rds On (Maximum) @ Id, Vgs 2.5 Ohm @ 1.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package DPAK
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1260859-STD4N80K5
Manufacturer Homepage www.st.com
Family Name STD4N80K5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD4N80K5 CAD Model

Description

The STD4N80K5 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is a part of ST's MDmesh™ K5 series which utilizes innovative proprietary technology aimed at achieving the perfect balance between low on-resistance and low gate charge to ensure high efficiency and reliability in various applications.

Key Features

  • Voltage Rating: The STD4N80K5 boasts an 800V drain-source breakdown voltage, making it suitable for high voltage applications that require a robust and reliable MOSFET.
  • Low On-Resistance: With an on-resistance of only 2.2 Ohm, this device ensures minimal power loss and heat generation, contributing to overall system efficiency.
  • High Current Capability: The MOSFET can handle continuous drain currents up to 3 A, making it capable of driving significant loads.
  • Enhanced Switching Performance: The device's optimized gate charge and capacitance profile lead to reduced switching losses, which is critical for high-frequency power conversion systems.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability under stress and transient conditions.
  • Zener-protected: The gate-source of this MOSFET is protected by an integrated Zener diode, safeguarding it against electrostatic discharges and voltage spikes.

Applications

The STD4N80K5 is versatile and can be used in a wide array of applications. It is particularly suited for:

  • Switching applications, including switch-mode power supplies (SMPS)
  • LED lighting solutions
  • High-efficiency DC-DC converters
  • Adapters and chargers
  • Power management in consumer and industrial electronics

Package and Quality

The device is offered in a surface-mount DPAK package, which not only saves precious board space but also enables better thermal performance. STMicroelectronics is committed to delivering high-quality products, and the STD4N80K5 is no exception. It is produced in certified facilities with stringent quality control, ensuring that each component meets the highest standards of performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3678 $54.7120
80+ $1.2812 $102.4960
125+ $1.2380 $154.7500
175+ $1.1514 $201.4950
230+ $1.1081 $254.8630
285+ $1.0648 $303.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,808 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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