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STC04IE170HV

Part No STC04IE170HV
Manufacturer STMicroelectronics
Catalog Transistors - Special Purpose
Description TRANS ESBT 1700V 4A TO247-4LHV / Transistor Gate Driver NPN - Emitter Switched Bipolar 1700V (1.7kV) 4A Through Hole TO-247-4L HV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Special Purpose
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
Transistor Type NPN - Emitter Switched Bipolar
Applications Gate Driver
Voltage - Rated 1700V (1.7kV)
Current Rating (Amps) 4A
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4L HV
Base Product Number STC04I
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-6201-5,497-6201-5
Standard Package 30
Win Source Part Number 1096721-STC04IE170HV
Ultra Librarian 3D Model Ultra Librarian STC04IE170HV CAD Model

Description

Introducing the STC04IE170HV - A High-Voltage Silicon-Carbide Power MOSFET

The STC04IE170HV is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This high-voltage, high-performance transistor is designed to meet the demanding requirements of today's energy-efficient power conversion systems. With its advanced material properties, the STC04IE170HV offers superior performance in applications such as solar inverters, electric vehicle chargers, industrial motor drives, and high-voltage power supplies.

Key Features:

  • High Blocking Voltage: With a drain-source voltage (VDS) of 1700V, the STC04IE170HV is capable of handling high-voltage applications with ease, ensuring safe and reliable operation under extreme conditions.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (RDS(on)) of only 4.5Ω, which minimizes conduction losses and enhances efficiency, particularly in high-current scenarios.
  • Fast Switching Speed: Thanks to the intrinsic properties of SiC, this MOSFET offers fast switching speeds, reducing switching losses and improving overall system performance.
  • Robustness: The STC04IE170HV is engineered to withstand harsh environments and is characterized by its high-temperature stability and excellent ruggedness.
  • Reduced Energy Losses: The device's low capacitances and gate charge ensure minimal energy is wasted during the switching process, making it ideal for high-efficiency power conversion.

Applications:

The versatility of the STC04IE170HV allows it to be used across a broad range of applications where power density and efficiency are critical. It is particularly well-suited for:

  • Solar Inverters
  • Electric Vehicle (EV) Charging Stations
  • Uninterruptible Power Supplies (UPS)
  • High-voltage DC/DC Converters
  • Industrial Motor Drives

Conclusion:

The STC04IE170HV represents a significant advancement in power MOSFET technology, offering designers a robust and efficient solution for high-voltage applications. By leveraging the benefits of silicon carbide, STMicroelectronics continues to push the boundaries of power conversion efficiency, enabling more compact, reliable, and energy-efficient electronic systems.

For more detailed information, specifications, and application support, visit the STMicroelectronics website or contact their technical support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $27.8572 $55.7144
5+ $22.8572 $114.2860
7+ $22.1429 $155.0003
10+ $21.4286 $214.2860
13+ $20.7143 $269.2859
17+ $18.5714 $315.7138
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Availability: 4,798 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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