STB32N65M5 - N-channel 650 V, 0.029 Ohm typ., 31 A MDmesh™ V Power MOSFET in D2PAK package

The STB32N65M5 from STMicroelectronics is a state-of-the-art N-channel Power MOSFET designed with the innovative MDmesh™ V technology, which is optimized for a wide range of high voltage applications. This Power MOSFET is housed in a robust and reliable D2PAK surface mount package, providing an excellent combination of low on-resistance and high switching performance.

With a drain-source voltage of 650 V, the STB32N65M5 ensures high voltage endurance, making it a perfect choice for applications that require efficient power conversion and management. The device features an extremely low typical on-resistance of just 0.029 Ohm, which results in reduced conduction losses and improves overall system efficiency.

Boasting a maximum continuous drain current of 31 A at 25°C, this Power MOSFET can handle significant power without compromising on performance. The MDmesh™ V technology also enables fast switching speeds, which further enhances the efficiency of power supplies, lighting applications, solar inverters, welding equipment, and other high-performance systems.

The STB32N65M5 is designed with Zener-protected gate, which provides an added layer of reliability against static discharge and other voltage spikes. This Power MOSFET is also characterized by its low gate charge and low capacitances, which contribute to its excellent dynamic performance.

Engineered to minimize on-state resistance while maintaining superior switching performance and ruggedness, the STB32N65M5 is ideally suited for high-efficiency solutions in power management applications. Its D2PAK package ensures good heat dissipation and easy integration into a variety of circuit designs.

Whether used in power factor correction circuits, LED lighting solutions, or high-performance computing power supplies, the STB32N65M5 from STMicroelectronics provides designers with a powerful and efficient component that meets the demands of modern high voltage applications.