The STF23NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This particular MOSFET is part of their MDmesh™ II Plus low Qg series, designed to offer both low on-resistance (R<sub>DS(on)) and low gate charge (Qg), which makes it an excellent choice for a wide range of high-efficiency applications.

Key Features

• High Voltage Capability: This MOSFET can handle up to 600V, making it suitable for high voltage applications.
• Low On-Resistance: With an R<sub>DS(on) of only 0.165 Ω, the STF23NM60N provides efficient power conversion, which can lead to energy savings in end applications.
• Reduced Gate Charge: A low gate charge means that less energy is required to turn the MOSFET on and off, which improves overall efficiency and allows for faster switching speeds.
• 100% Avalanche Tested: This feature ensures reliability and robustness in demanding applications where the MOSFET may be subjected to high-energy pulses.
• Zener-Protected: The built-in Zener diode protects the gate from electrostatic discharges, enhancing the MOSFET's ruggedness.

Applications

The STF23NM60N is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Motor Control
• Welding Equipment
• Uninterruptible Power Supplies (UPS)

Package and Environmental Information

The STF23NM60N comes in a TO-220FP package, which is known for its good thermal performance and is commonly used for medium to high power applications. STMicroelectronics is committed to environmental sustainability and ensures that this product is compliant with RoHS directives.

For designers and engineers looking for a reliable N-channel MOSFET with high efficiency and robust performance, the STF23NM60N from STMicroelectronics is an excellent choice that balances performance with reliability in a variety of power management tasks.