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STB23NM60N

Part No STB23NM60N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET | MOSFET N-CH 600V 19A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 19A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 180mOhm at 9.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2050pF at 50V
Power Dissipation (Maximum) 150W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260627-STB23NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB23NM60N CAD Model

Description

The STB23NM60N is a state-of-the-art N-channel MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This power MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies, solar inverters, DC-DC converters, and motor control systems.

Key Features

  • High Voltage Capability: The STB23NM60N can withstand drain-source voltages up to 600V, making it suitable for high voltage applications.
  • Low On-Resistance: With an RDS(on) as low as 0.165Ω, this MOSFET ensures low conduction losses and improves overall efficiency.
  • High Current Rating: It can handle continuous drain currents up to 17A, facilitating high current operations.
  • Fast Switching Performance: The fast switching capabilities minimize switching losses and enhance performance in high-frequency circuits.
  • 100% Avalanche Tested: This feature guarantees robustness and reliability, ensuring the MOSFET can withstand high energy pulses.

Applications

The versatility of the STB23NM60N N-channel MOSFET allows it to be used in a variety of applications. It is particularly well-suited for:

  • Switch-mode power supplies (SMPS)
  • High efficiency DC-DC converters
  • Power factor correction (PFC) circuits
  • LED lighting solutions
  • Solar inverters and photovoltaic applications
  • Motor drives and control systems

Environmental and Quality Certifications

The STB23NM60N complies with various environmental standards, ensuring minimal ecological impact:

  • RoHS compliant
  • Halogen-free component

Package and Availability

This MOSFET is available in a TO-220 package, which is well-known for its robustness and thermal performance. The package is designed to facilitate easy mounting on a printed circuit board (PCB) and is compatible with standard soldering processes.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the STMicroelectronics website or contact their sales representatives for availability and purchasing options.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6900 $59.1800
53+ $2.2072 $116.9816
82+ $2.1379 $175.3078
112+ $2.0686 $231.6832
145+ $2.0005 $290.0725
194+ $1.7937 $347.9778
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,430 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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