The K4B2G1646F-BYMA is a 2Gb DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. It's designed for use in a wide range of applications requiring high-speed data access and storage.

Applications:

• Desktop and laptop computers
• Graphics cards
• Gaming consoles
• Networking equipment
• Embedded systems

Features:

• Capacity: 2Gb (256M x 8)
• DDR3 interface
• Data rate: Up to 1600 Mbps
• Operating voltage: 1.5V
• 8 internal banks for concurrent operation
• RoHS compliant

Benefits:

• Provides high-speed data access for improved system performance
• Low power consumption reduces energy costs and extends battery life in portable devices
• Large capacity allows for handling of complex applications and large datasets
• Enhances overall system responsiveness and multitasking capabilities
• Suitable for a wide range of applications due to its versatility and performance

Additional Details:

The K4B2G1646F-BYMA DDR3 SDRAM chip features an 8n prefetch architecture and supports burst lengths of 8. It also incorporates on-die termination (ODT) to improve signal integrity and reduce reflections. The chip is packaged in a FBGA (Fine-pitch Ball Grid Array) package. This component is a critical element in systems requiring rapid data manipulation and storage.

Electrical Characteristics:

• Organization: 256M x 8
• Interface: DDR3
• Data Rate: 1600 Mbps
• Supply Voltage: 1.5V
• Operating Temperature: 0°C to 85°C