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RJU003N03FRA T106

Part No RJU003N03FRA T106
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 183138-RJU003N03FRA T106
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJU003N03FRA T106 CAD Model

Description

The RJU003N03FRA T106 is an N-channel power MOSFET from Rohm Semiconductor. This MOSFET is designed for low-voltage, high-current switching applications where efficiency and space-saving are critical. It is commonly used in portable devices and power management circuits.

Applications

  • DC-DC converters
  • Load switches
  • Power management in portable devices
  • Battery protection circuits
  • Motor control applications

Features

  • Low on-resistance (RDS(on))
  • High-speed switching
  • Low gate charge (Qg)
  • Small package size
  • Logic-level gate drive

Benefits

  • Increased energy efficiency due to low on-resistance
  • Reduced switching losses due to high-speed switching characteristics
  • Simplified gate drive circuitry because of logic-level gate drive
  • Space-saving design due to small package size
  • Improved thermal performance

Additional Details

The RJU003N03FRA T106 typically features a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of around 3A to 5A, depending on the operating conditions and temperature. The on-resistance (RDS(on)) is very low, typically in the range of milliohms, which minimizes power dissipation during conduction. The gate-source threshold voltage (VGS(th)) is low, allowing the device to be driven directly from logic-level signals. The small package size, such as a SOT-23 or similar, makes it suitable for space-constrained applications. The device's high-speed switching capability minimizes switching losses, contributing to higher overall efficiency. Proper gate drive design is essential to achieve optimal performance from the RJU003N03FRA T106. A gate resistor is typically used to control the switching speed and prevent oscillations. Careful consideration of the layout and component selection is necessary to minimize parasitic inductance, which can affect switching performance and cause voltage overshoot. Detailed specifications are typically available in the manufacturer's datasheet, which should be consulted before using the device in any application. Rohm Semiconductor provides comprehensive documentation to aid engineers in properly implementing the RJU003N03FRA T106 in their designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
275+ $0.1827 $50.2425
670+ $0.1500 $100.5000
1,035+ $0.1453 $150.3855
1,425+ $0.1406 $200.3550
1,840+ $0.1359 $250.0560
2,465+ $0.1218 $300.2370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 275 pcs
Order Increment : 1 pcs
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