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Same model may have multiple batches, images only for reference.
BSM120D12P2C005 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

BSM120D12P2C005

Part No BSM120D12P2C005
Manufacturer Rohm Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 1200V 120A MODULE
Datasheet
BSM120D12P2C005 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Rohm Semiconductor
Package Bulk
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs(th) (Max) @ Id 2.7V @ 22mA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
Power - Max 780W
Temperature Range - Operating -40°C ~ 150°C (TJ)
Package / Case Module
Supplier Device Package Module
Base Product Number BSM120
Standard Package 12 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572077-BSM120D12P2C005
Ultra Librarian 3D Model Ultra Librarian BSM120D12P2C005 CAD Model

Description

The BSM120D12P2C005 is an active module from Rohm Semiconductor.

  • Category: discrete semiconductor products, specifically transistors, FETs, and MOSFET arrays
  • Technology: silicon carbide (SiC)
  • Vdss: 1200V (1.2kV)
  • Id: 120A (Tc) @ 25°C
  • Configuration: 2 N-Channel (half bridge)
  • Package: bulk package with a standard package size of 12 pieces
  • ECCN: EAR99
  • REACH: unaffected
  • Maximum Power Rating: 780W
  • Operating Temperature: -40°C to 150°C (TJ)
  • Suitable for: various applications that require high voltage and high current switching
  • Status: active product and can be considered for new designs

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