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DMG6602SVTQ-7

Part No DMG6602SVTQ-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET N/P-CH 30V TSOT26 / COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 3.4A, 2.8A
Rds On (Maximum) at Id, Vgs 60mOhm at 3.1A, 10V
Vgs(th) (Maximum) at Id 2.3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 400pF at 15V
Power - Max 840mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801183-DMG6602SVTQ-7
Ultra Librarian 3D Model Ultra Librarian DMG6602SVTQ-7 CAD Model

Description

DMG6602SVTQ-7 MOSFET by Diodes Incorporated

The DMG6602SVTQ-7 is a high-performance, N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to deliver efficient power management and switching functionalities in a wide range of applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient solutions to the electronics industry.

Key Features:

  • Low On-Resistance: The DMG6602SVTQ-7 features a low on-resistance (RDS(on)), which enhances its efficiency by minimizing conduction losses. This characteristic is particularly beneficial in applications where high current handling and efficiency are crucial.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET is ideal for high-frequency circuits, contributing to reduced switching losses and improved overall performance.
  • Power Dissipation: With a power dissipation of 1.3W, the DMG6602SVTQ-7 can handle moderate power levels, making it suitable for a variety of medium-power applications.
  • Gate Charge: The device has been optimized for a low total gate charge (QG), which is beneficial for applications that require frequent switching as it reduces the energy required to turn the MOSFET on and off.

Applications:

The DMG6602SVTQ-7 is versatile and can be used in numerous applications, including:

  • Power Management
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Circuits

Package and Reliability:

The DMG6602SVTQ-7 comes in a compact, surface-mount TSOT-23 package, which is not only space-efficient but also conducive to excellent thermal performance. The device is RoHS compliant, reflecting Diodes Incorporated's dedication to environmental sustainability. Additionally, it is characterized for operation from -55°C to +150°C, ensuring reliable performance across a broad range of temperature conditions.

Overall, the DMG6602SVTQ-7 MOSFET is an excellent choice for designers looking for a component that offers a balance between power efficiency, thermal management, and high-speed operation, all packed into a small footprint suitable for space-constrained applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
510+ $0.1138 $58.0380
1,240+ $0.0935 $115.9400
1,920+ $0.0905 $173.7600
2,640+ $0.0875 $231.0000
3,415+ $0.0847 $289.2505
4,570+ $0.0759 $346.8630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 145,688 pieces
MOQ: 510 pcs
Order Increment : 1 pcs
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