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DMC25D1UVT-7

Part No DMC25D1UVT-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET N/P-CH 25V/12V TSOT26 / COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 25V, 12V
Current - Continuous Drain (Id) at 25°C 500mA, 3.9A
Rds On (Maximum) at Id, Vgs 4Ohm at 400mA, 4.5V
Vgs(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 0.9nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 27.6pF at 10V
Power - Max 1.3W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801106-DMC25D1UVT-7
Ultra Librarian 3D Model Ultra Librarian DMC25D1UVT-7 CAD Model

Description

Introducing the DMC25D1UVT-7 MOSFET from Diodes Incorporated

The DMC25D1UVT-7 is a high-performance, dual N-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by the renowned semiconductor company Diodes Incorporated. This advanced MOSFET is part of their extensive range of power management devices, tailored for energy-efficient and compact solutions.

Constructed with a low on-resistance and high-speed switching capabilities, the DMC25D1UVT-7 is an ideal choice for a variety of applications. It is housed in a small form factor package, the SOT-563, which is perfect for space-constrained designs. The miniature footprint of this MOSFET allows for high-density PCB layouts, making it an excellent selection for portable and miniaturized electronic assemblies.

The device boasts dual N-Channel operation with a continuous drain current of 2.5A, which enables efficient power handling in circuits. Its low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, leading to reduced power consumption and improved overall efficiency. This is particularly beneficial in battery-powered devices where energy conservation is paramount.

With a maximum drain-source voltage (Vds) of 20V, the DMC25D1UVT-7 is capable of handling moderate voltage applications while maintaining robustness against sudden voltage spikes. This feature is critical for ensuring the longevity and reliability of the MOSFET in various electronic systems. Additionally, the device offers fast switching speeds, a characteristic that is essential in high-frequency circuits such as DC-DC converters, motor controllers, and power management modules.

The DMC25D1UVT-7 also includes built-in electrostatic discharge (ESD) protection, safeguarding the MOSFET against static electricity and other transient voltage events that could potentially cause damage. This added layer of security makes the device more resilient in harsh environments and during handling and assembly processes.

In summary, the DMC25D1UVT-7 from Diodes Incorporated is a versatile and reliable MOSFET that combines compact packaging with high performance. Its efficiency, durability, and protective features make it an excellent choice for designers looking to optimize their power management strategies in a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0859 $50.2515
1,420+ $0.0705 $100.1100
2,200+ $0.0683 $150.2600
3,030+ $0.0661 $200.2830
3,915+ $0.0639 $250.1685
5,240+ $0.0573 $300.2520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 153,000 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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