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IRF5852

Name: IRF5852
Brand: Infineon Technologies
SKU: 604382
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRF5852
Manufacturer	Infineon Technologies
Catalog	FETs - Arrays
Description	Power MOSFET(Vdss=20V) \| MOSFET 2N-CH 20V 2.7A 6-TSOP
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Vds - Drain-Source Breakdown Voltage	20V
Id - Continuous Drain Current	2.7A
Rds On (Maximum) at Id, Vgs	90mOhm at 2.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id	1.25V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds	400pF at 15V
Maximum Power	960mW
Mounting Style	SMD
Manufacturer Package	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP
Manufacturer Pack Quantity	100
MSL Level	1 (Unlimited)
Win Source Part Number	1187070-IRF5852
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IRF5852 CAD Model

Alternative Products

Description

The 490098 is a 2 N-Channel (Dual) transistor from Infineon Technologies with a drain-source breakdown voltage of 20V and a continuous drain current of 2.7A.

Drain-Source Breakdown Voltage: 20V
Continuous Drain Current: 2.7A
Maximum Power: 960mW
Gate-Source Voltage Threshold: 1.25V @ 250μA
Input Capacitance: 400pF @ 15V
Gate Charge: 6nC @ 4.5V
Maximum Rds On: 90mOhm @ 2.7A and 4.5V
Package: 6-TSOP
Status: Obsolete

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
60+	$0.9752	$58.5120
145+	$0.8002	$116.0290
225+	$0.7752	$174.4200
310+	$0.7502	$232.5620
400+	$0.7253	$290.1200
535+	$0.6502	$347.8570

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,000 pieces

MOQ: 60 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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