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Same model may have multiple batches, images only for reference.
IRF5852 Real Image
Same model may have multiple batches, images only for reference.

IRF5852

Part No IRF5852
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Power MOSFET(Vdss=20V) | MOSFET 2N-CH 20V 2.7A 6-TSOP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 2.7A
Rds On (Maximum) at Id, Vgs 90mOhm at 2.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.25V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 400pF at 15V
Maximum Power 960mW
Mounting Style SMD
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1187070-IRF5852
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF5852 CAD Model

Description

The 490098 is a 2 N-Channel (Dual) transistor from Infineon Technologies with a drain-source breakdown voltage of 20V and a continuous drain current of 2.7A.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.7A
  • Maximum Power: 960mW
  • Gate-Source Voltage Threshold: 1.25V @ 250μA
  • Input Capacitance: 400pF @ 15V
  • Gate Charge: 6nC @ 4.5V
  • Maximum Rds On: 90mOhm @ 2.7A and 4.5V
  • Package: 6-TSOP
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9752 $58.5120
145+ $0.8002 $116.0290
225+ $0.7752 $174.4200
310+ $0.7502 $232.5620
400+ $0.7253 $290.1200
535+ $0.6502 $347.8570
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Availability: 3,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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