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Same model may have multiple batches, images only for reference.
PJT7600_R1_00001 Panjit
Same model may have multiple batches, images only for reference.

PJT7600_R1_00001

Part No PJT7600_R1_00001
Manufacturer Panjit
Catalog FETs - Arrays
Description 20V COMPLEMENTARY ENHANCEMENT MO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Panjit International Inc.
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.6nC @ 4.5V, 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 92pF @ 10V, 151pF @ 10V
Power - Max 350mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number PJT7600
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376913-PJT7600_R1_00001
Ultra Librarian 3D Model Ultra Librarian PJT7600_R1_00001 CAD Model

Description

The PJT7600 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) array from Panjit International Inc.

  • Category: FET, MOSFET Arrays
  • Temperature Range: -55°C to 150°C
  • Maximum Power: 350 mW
  • Drain-to-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 1A @ 25°C
  • On-Resistance (Rds On): 150mOhm @ 1A and 4.5V
  • Gate Threshold Voltage (Vgs(th)): 1V @ 250µA
  • Package: 6-TSSOP
  • Mounting: Surface Mount
  • REACH: Unaffected

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