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SMMBT5401LT1G

Part No SMMBT5401LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 150V 0.5A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 60 @ 10mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 029421-SMMBT5401LT1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SMMBT5401LT1G CAD Model

Description

ON Semiconductor SMMBT5401LT1G - PNP Bipolar Transistor

The SMMBT5401LT1G is a high-quality PNP bipolar junction transistor (BJT) from ON Semiconductor, renowned for its reliability and performance in a wide range of electronic applications. Designed with state-of-the-art semiconductor technology, this transistor is an excellent choice for amplification and switching applications where low power consumption and space-saving are essential.

This PNP transistor is capable of handling moderate power levels with a collector-emitter voltage (VCEO) of 150V, collector-base voltage (VCBO) of 160V, and emitter-base voltage (VEBO) of 5V. The SMMBT5401LT1G boasts a continuous collector current (IC) of up to 600 mA, making it suitable for driving medium-power loads.

One of the key features of the SMMBT5401LT1G is its SOT-23 package, which is a compact, surface-mount package that allows for efficient use of PCB space. This makes the transistor ideal for use in densely packed circuits where real estate is at a premium. The small form factor does not compromise the transistor's thermal performance, thanks to ON Semiconductor's excellent thermal management design.

The SMMBT5401LT1G offers high gain, with a minimum DC current gain (hFE) of 100 at 10 mA, which ensures that the transistor can be driven with low base currents, thus reducing overall power consumption. This makes it an excellent choice for battery-powered devices or energy-sensitive applications.

ON Semiconductor has designed the SMMBT5401LT1G with versatility in mind. It can be used in a variety of circuits, including but not limited to signal amplification, power management, load driving, and as a switch in various electronic devices such as sensors, motors, and other actuators.

With its robust performance and ON Semiconductor's commitment to quality, the SMMBT5401LT1G is a reliable component for designers and engineers looking to enhance the efficiency and functionality of their electronic projects. Whether you're working on consumer electronics, industrial systems, or automotive applications, this PNP transistor is engineered to deliver consistent, high-performance results.

Overall, the SMMBT5401LT1G is a testament to ON Semiconductor's dedication to providing innovative, high-quality semiconductor solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
685+ $0.0733 $50.2105
1,665+ $0.0602 $100.2330
2,575+ $0.0583 $150.1225
3,550+ $0.0564 $200.2200
4,590+ $0.0545 $250.1550
6,135+ $0.0489 $300.0015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,000 pieces
MOQ: 685 pcs
Order Increment : 1 pcs
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