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BC558BRL1

Part No BC558BRL1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Amplifier Transistors
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Part Status Obsolete(EOL)
Transistor Type PNP
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 30V
Vce Saturation (Maximum) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Maximum) 100nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 180 @ 2mA, 5V
Power - Max 625mW
Frequency - Transition 360MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Manufacturer Package TO-92-3
RoHS State Request Verification
Win Source Part Number 1151965-BC558BRL1
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2k pcs
Family Name BC558B
Introduction Date September 29, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian BC558BRL1 CAD Model

Description

The ON Semiconductor BC558BRL1 is a high-quality PNP bipolar junction transistor (BJT) that offers reliable performance for a wide range of electronic applications. This versatile semiconductor device is designed to provide excellent amplification and switching capabilities, making it an ideal choice for designers and engineers looking to build efficient and compact electronic circuits.

Key Features

  • Transistor Polarity: PNP - This configuration indicates that the majority charge carriers are holes, making it suitable for use in positive-side switching applications.
  • Collector-Emitter Voltage (VCEO): 30V - The maximum voltage between the collector and emitter terminals that the transistor can withstand while the base is open-circuited.
  • Collector Current (IC): -100mA - The maximum continuous collector current that can flow through the transistor, with a negative sign indicating the direction of current flow in a PNP transistor.
  • Power Dissipation (Pd): 500mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 110 to 800 - A measure of the transistor's ability to amplify the input signal. A higher hFE value indicates greater amplification.
  • Package / Case: TO-92-3 - A widely-used through-hole package that is easy to handle and solder, making it suitable for prototyping and production.

Applications

The BC558BRL1 is suitable for a variety of applications, including but not limited to:

  • Audio amplifiers and pre-amps
  • Signal processing
  • Switching and linear amplification
  • Driver stages in hi-fi amplifiers
  • General-purpose switching and amplification

Quality and Reliability

ON Semiconductor is known for their commitment to quality and reliability, and the BC558BRL1 is no exception. This transistor is manufactured to the highest standards to ensure consistent performance and longevity, even in demanding conditions.

Environmental and Regulatory Compliance

The BC558BRL1 meets various environmental and regulatory standards, ensuring that it can be used in a broad range of markets and applications around the world. It is RoHS compliant, minimizing the environmental impact by restricting the use of certain hazardous substances in electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,445+ $0.0401 $57.9445
3,510+ $0.0330 $115.8300
5,435+ $0.0319 $173.3765
7,495+ $0.0309 $231.5955
9,655+ $0.0300 $289.6500
12,935+ $0.0268 $346.6580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,000 pieces
MOQ: 1445 pcs
Order Increment : 1 pcs
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