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MJ11016G

Part No MJ11016G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description High-Current Complementary Silicon Transistors
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tray
Transistor Type NPN - Darlington
Current - Collector (Ic) (Maximum) 30A
Voltage - Collector Emitter Breakdown (Maximum) 120V
Vce Saturation (Maximum) @ Ib, Ic 4V @ 300mA, 30A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 1000 @ 20A, 5V
Power - Max 200W
Frequency - Transition 4MHz
Operating Temperature Range -55°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-204AA, TO-3
Manufacturer Package TO-3
Win Source Part Number 1223552-MJ11016G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Family Name MJ11016
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian MJ11016G CAD Model

Description

The MJ11016G from ON Semiconductor is a state-of-the-art NPN bipolar power transistor designed to handle high power and high-speed switching applications. This device is a perfect choice for linear and switching applications, offering a robust and reliable solution for engineers and designers alike.

Key Features

  • High Collector-Emitter Breakdown Voltage: With a VCEO of 120V, the MJ11016G can handle significant voltage without succumbing to breakdown, making it ideal for high-voltage circuits.
  • High Current Capacity: This transistor can support a continuous collector current (IC) of up to 30A, ensuring it can manage heavy loads without performance degradation.
  • High Power Dissipation: With a power dissipation rating of 200W, the MJ11016G is capable of dissipating a considerable amount of heat, essential for maintaining stability and longevity in demanding applications.
  • Fast Switching Speeds: The device is optimized for fast switching, reducing transition times and improving efficiency in high-speed circuits.
  • Robust Construction: Encased in a TO-3 package, the MJ11016G is built to withstand harsh conditions and provide a reliable performance over a wide range of temperatures.

Applications

The versatility of the MJ11016G allows it to be used in a variety of applications, including:

  • Power regulators and converters
  • Motor controls
  • Audio amplifiers
  • Switching circuits
  • High-power switching applications

Reliability and Quality

ON Semiconductor is renowned for its commitment to quality and reliability, and the MJ11016G is no exception. Each transistor is subjected to rigorous testing and quality control measures to ensure it meets the highest standards. Customers can trust in the MJ11016G for consistent performance and durability in their high-power applications.

Environmental Compliance

The MJ11016G is also designed with environmental responsibility in mind. It is compliant with RoHS (Restriction of Hazardous Substances) directives, which means it is free from certain dangerous materials commonly used in the electronics industry. This commitment to environmental sustainability makes the MJ11016G an eco-friendly choice for your power transistor needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.0971 $52.3884
10+ $10.7463 $107.4630
15+ $10.4105 $156.1575
20+ $10.0747 $201.4940
26+ $9.7389 $253.2114
35+ $8.7314 $305.5990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 84 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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