ON Semiconductor SBE818-TL-E Product Overview

The SBE818-TL-E from ON Semiconductor is a high-performance, Surface-Mount Schottky Barrier Diode designed for applications requiring low forward voltage drop and high surge current capabilities. This diode is part of ON Semiconductor's extensive range of semiconductor components, known for their reliability and cutting-edge technology.

Key Features

• Low Forward Voltage Drop: The SBE818-TL-E has a low forward voltage drop, which enhances energy efficiency by minimizing power loss during operation.
• High Surge Current Capability: This product can withstand significant surge currents, making it suitable for applications that experience transient overcurrent conditions.
• Surface-Mount Package: The diode comes in a compact SOD-323 package, which is ideal for space-constrained applications and allows for automated assembly processes.
• Lead-Free and RoHS Compliant: In line with modern environmental standards, the SBE818-TL-E is lead-free and RoHS compliant, reducing the environmental impact and meeting regulatory requirements for electronic components.

Applications

The SBE818-TL-E is versatile and can be used in a variety of electronic circuits and applications, including:

• Power supply designs
• DC-DC converters
• Reverse polarity protection
• Low voltage, high-frequency inverters
• Free-wheeling diodes
• Protection circuits

Technical Specifications

The SBE818-TL-E has the following technical specifications:

• Maximum Repetitive Reverse Voltage (V_RRM): 40V
• Maximum Forward Continuous Current (I_F): 800mA
• Maximum Forward Voltage (V_F at I_F): 0.385V at 800mA
• Maximum Reverse Current (I_R at V_RRM): 30µA at 40V
• Operating Junction Temperature Range: -55°C to +150°C

The SBE818-TL-E is a robust and efficient solution for designers looking to enhance their systems with a reliable Schottky Barrier Diode. With its low forward voltage drop and high surge current capability, it is an excellent choice for energy-sensitive and high-performance applications.