IRGP4078D-E Infineon Technologies
Same model may have multiple batches, images only for reference.

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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 74A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 50A
Maximum Power Dissipation 278W
Total Switching Energy(Ets) 1.1mJ (off)
Input Type Standard
Gate Charge 92nC
Turn-on and Turn-off delay time -/116ns
Testing Conditions 400V, 50A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Win Source Part Number 040783-IRGP4078D-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP4078D-E CAD Model

Description

The Infineon Technologies 040783-IRGP4078D-E is an obsolete (EOL) Trench Insulated Gate Bipolar Transistor (IGBT) designed for use in various power switching applications. This IGBT has a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 74A.

  • Gate Charge: 92nC
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V, 50A
  • Turn-on Delay Time: -
  • Turn-off Delay Time: 116ns
  • Package: TO-247AD
  • Mounting: through-hole
  • Temperature Range for Operating: -55°C to 175°C (TJ)
  • Supply and Demand Status: limited.

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